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2N5551TF

Manufacturer:

On Semiconductor

Mfr.Part #:

2N5551TF

Datasheet:
Description:

BJTs TO-92 Through Hole NPN 625 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)160 V
Length5.2 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height5.33 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
Weight0.24 g
Contact PlatingTin
Frequency300 MHz
Number of Elements1
Current Rating600 mA
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Power Dissipation625 mW
Power Dissipation625 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage160 V
Transition Frequency100 MHz
Element ConfigurationSingle
Max Frequency300 MHz
Collector Emitter Voltage (VCEO)160 V
Max Breakdown Voltage160 V
Gain Bandwidth Product300 MHz
Collector Base Voltage (VCBO)180 V
Collector Emitter Saturation Voltage200 mV
Emitter Base Voltage (VEBO)6 V
hFE Min80
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 months ago)
Max Cutoff Collector Current600 mA
Transistor TypeNPN

Stock: 7554

Distributors
pcbx
Unit Price$0.15645
Ext.Price$0.15645
QtyUnit PriceExt.Price
1$0.15645$0.15645
10$0.09233$0.92330
50$0.07523$3.76150
100$0.06130$6.13000
500$0.04753$23.76500
1000$0.04001$40.01000
3000$0.03450$103.50000
5000$0.02975$148.75000
10000$0.02565$256.50000